NSN 5961-00-005-8918
Part Details | TRANSISTOR
5961-00-005-8918 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 102302, 102-302, 2N3666, RELEASE 4967, 2N3666, 2N3666, 5961-00-005-8918, 00-005-8918, 5961000058918, 000058918
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 11, 1972 | 00-005-8918 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-005-8918
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 102-302 | 53553 | AMETEK INCSCHUTTE AND KOERTING DIV |
| 2N3666 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 4967 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3666 | 07263 | FAIRCHILD SEMICONDUCTOR CORP |
| 2N3666 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
Technical Data | NSN 5961-00-005-8918
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 120.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 8.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AC1.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB28.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES NOMINAL |
| OVERALL DIAMETER | 0.370 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |