NSN 5961-00-013-9643
Part Details | TRANSISTOR
5961-00-013-9643 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: DMS 80064B, 517011, 517-011, MEM517, 6186272, 618627-2, 5961-00-013-9643, 00-013-9643, 5961000139643, 000139643
Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
---|---|---|---|
59 | MAY 10, 1968 | 00-013-9643 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-013-9643
Part Number | Cage Code | Manufacturer |
---|---|---|
DMS 80064B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
517-011 | 14936 | GENERAL SEMICONDUCTOR INC |
MEM517 | 14936 | GENERAL SEMICONDUCTOR INC |
618627-2 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-013-9643
Characteristic | Specifications |
---|---|
SEMICONDUCTOR MATERIAL | SILICON |
INTERNAL CONFIGURATION | FIELD EFFECT |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | -30.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND -25.0 MAXIMUM GATE TO SOURCE VOLTAGE AND -25.0 MAXIMUM DRAIN TO GATE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | ACM250.00 MILLIAMPERES MAXIMUM |
POWER RATING PER CHARACTERISTIC | AB600.0 MILLIWATTS MAXIMUM |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | METAL |
MOUNTING METHOD | TERMINAL |
TERMINAL LENGTH | 1.500 INCHES MINIMUM |
TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.260 INCHES MAXIMUM |
OVERALL DIAMETER | 0.370 INCHES NOMINAL |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |