NSN 5961-00-016-3768
Part Details | TRANSISTOR
5961-00-016-3768 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1675A, 2N1675, 2N1675, 2N1675, RELEASE 4140, 5961-00-016-3768, 00-016-3768, 5961000163768, 000163768
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-016-3768 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-016-3768
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1675A | C7191 | ADELCO ELEKTRONIK GMBH |
| 2N1675 | 64959 | AMERICAN TELEPHONE AND TELEGRAPH CO |
| 2N1675 | 94157 | AT AND T MICROELECTRONICS INCREADING WKS |
| 2N1675 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 4140 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
Technical Data | NSN 5961-00-016-3768
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AB10.00 AMPERES MAXIMUM AND AC10.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB800.0 MILLIWATTS MAXIMUM |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.281 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 1 THREADED STUD AND 2 SOLDER STUD |
| OVERALL LENGTH | 0.475 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.875 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |