NSN 5961-00-026-8841
Part Details | TRANSISTOR
5961-00-026-8841 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: L00857, JAN2N328A, 5961-00-026-8841, 00-026-8841, 5961000268841, 000268841
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 26, 1972 | 00-026-8841 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-026-8841
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| L00857 | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| JAN2N328A | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-00-026-8841
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 40.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | AE3.00 MILLIAMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AB400.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | ITEM MUST COMPLY WITH RQMT OF DESC PRODUCTION STD NO. L00857; JUNCTION PATTERN ARRANGEMENT: NPN |
| CRITICALITY CODE JUSTIFICATION | FEAT |