NSN 5961-00-057-0412
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-057-0412 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 32211024P1, 322-11024P1, 32211024P1, 322-11024P1, 32211024P1, 322-11024P1, 32211024P1, 322-11024P1, 5961-00-057-0412, 00-057-0412, 5961000570412, 000570412
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-057-0412 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-057-0412
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 322-11024P1 | 14433 | ITT SEMICONDUCTORS DIV |
| 322-11024P1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 322-11024P1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 322-11024P1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-057-0412
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC |
| CURRENT RATING PER CHARACTERISTIC | CN20.00 AMPERES MAXIMUM |
| POWER RATING PER CHARACTERISTIC | AF300.0 MILLIWATTS MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 105.0 DEG CELSIUS AMBIENT AIR |
| INCLOSURE MATERIAL | GLASS AND METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.250 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.320 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.380 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |