NSN 5961-00-058-2637

Part Details | TRANSISTOR

5961-00-058-2637 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 400705, 2N1015E, 400705, 2N1015E, RELEASE2700, 9281171, 928117-1, 2N1015E, 2N1015E, 2N1015E, 2N1015E, 2N1015E, 5961-00-058-2637, 00-058-2637, 5961000582637, 000582637

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196100-058-263720588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-058-2637
Part Number Cage Code Manufacturer
40070520284AIMTRON SYSTEMS LLCDBA TARGET
2N1015E52333API ELECTRONICS, INC.DBA API TECHNOLOGIES CORP
40070512909CARDION INC
2N1015E80131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE270080131ELECTRONIC INDUSTRIES ASSOCIATION
928117-182577RAYTHEON COMPANYDBA RAYTHEON
2N1015E31338SEMITRONICS CORP
2N1015E07256SILICON TRANSISTOR CORPSUB OF BBF INC
2N1015E30045SOLID POWER CORP
2N1015E30043SOLID STATE DEVICES, INC.
2N1015E05277WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV
Technical Data | NSN 5961-00-058-2637
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC250.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE
CURRENT RATING PER CHARACTERISTICAB5.00 AMPERES MAXIMUM AND AC7.50 AMPERES MAXIMUM
POWER RATING PER CHARACTERISTICAB150.0 WATTS MAXIMUM
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT165.0 DEG CELSIUS JUNCTION
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.562 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER0.750 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY2 TAB, SOLDER LUG AND 1 CASE
OVERALL LENGTH0.546 INCHES MAXIMUM
OVERALL DIAMETER1.280 INCHES NOMINAL
FEATURES PROVIDED HERMETICALLY SEALED CASE