NSN 5961-00-432-0186
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-432-0186 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: A212104H, DZ721026K, JANTX1N753A1, JANTX1N753A-1, 10668604002, 10668604-002, 5961-00-432-0186, 00-432-0186, 5961004320186, 004320186
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAY 17, 1974 | 00-432-0186 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-432-0186
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| A212104H | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| DZ721026K | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| JANTX1N753A-1 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 10668604-002 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-432-0186
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BCT5.89 MINIMUM AND C.51 MAXIMUM AND CEC4.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAS65.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF400.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.100 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.092 INCHES MINIMUM AND 0.130 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL; JUNCTION PATTERN ARRANGEMENT: PN |
| CRITICALITY CODE JUSTIFICATION | FEAT |
| END ITEM IDENTIFICATION | GUIDED MISSILE, INTERCEPT |