NSN 5961-00-470-0115
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-470-0115 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N4930A, 3797161, 379716-1, 3797161, 379716-1, 3797161, 379716-1, 5961-00-470-0115, 00-470-0115, 5961004700115, 004700115
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 28, 1970 | 00-470-0115 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-470-0115
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N4930A | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 379716-1 | 54X10 | RAYTHEON COMPANYDBA RAYTHEON |
| 379716-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 379716-1 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-470-0115
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET19.2 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACEB7.50 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF0.4 WATTS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.265 INCHES NOMINAL |
| OVERALL DIAMETER | 0.096 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |