NSN 5961-00-481-8283
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-481-8283 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 19020028, 1902-0028, 1N2999A, 19020028, 1902-0028, 1N2999A, 5961-00-481-8283, 00-481-8283, 5961004818283, 004818283
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 11, 1970 | 00-481-8283 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-481-8283
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1902-0028 | 50434 | AVAGO TECHNOLOGIES U.S. INC.DBA AVAGO TECHNOLOGIES |
| 1N2999A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1902-0028 | 28480 | HEWLETT-PACKARD COMPANYDBA HP |
| 1N2999A | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
Technical Data | NSN 5961-00-481-8283
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET10.0 MAXIMUM |
| VOLTAGE TOLERANCE IN PERCENT | M10.0/P10.0 |
| CURRENT RATING PER CHARACTERISTIC | BACAS45.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF10.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZM175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS AND METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | D0-4 |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.190 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 TAB, SOLDER LUG AND 1 THREADED STUD |
| OVERALL LENGTH | 1.253 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.437 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |