NSN 5961-00-498-8464
Part Details | TRANSISTOR
5961-00-498-8464 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: RELEASE4739, 2N3386, 2N3386, 2N3386, 2N3386, 2N3386, 2N3386, 5961-00-498-8464, 00-498-8464, 5961004988464, 004988464
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 15, 1969 | 00-498-8464 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-498-8464
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| RELEASE4739 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3386 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N3386 | 33178 | MICROSEMI PPC INC |
| 2N3386 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 2N3386 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
| 2N3386 | 5L401 | SOLID STATE INC |
| 2N3386 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-00-498-8464
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAJ30.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAB50.00 MILLIAMPERES NOMINAL AND BACAC100.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB300.0 MILLIWATTS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.188 INCHES NOMINAL |
| OVERALL DIAMETER | 0.219 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE4739 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
| NONDEFINITIVE SPEC/STD DATA | 2N3386 TYPE |