NSN 5961-00-596-3297
Part Details | TRANSISTOR
5961-00-596-3297 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N6166, ASI10790, SPF750, 0488560002, 048856-0002, 5961-00-596-3297, 00-596-3297, 5961005963297, 005963297
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 11, 1975 | 00-596-3297 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-596-3297
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N6166 | 4U751 | ADVANCED SEMICONDUCTOR,INC.DBA A S I |
| ASI10790 | 4U751 | ADVANCED SEMICONDUCTOR,INC.DBA A S I |
| SPF750 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 048856-0002 | 65597 | THALES DEFENSE & SECURITY, INC. |
Technical Data | NSN 5961-00-596-3297
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | BAE65.0 MINIMUM AND BAC35.0 MINIMUM AND B.0 MINIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC9.00 MILLIAMPERES NOMINAL AND BACBF30.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG117.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC AND METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 4 RIBBON |
| OVERALL LENGTH | 1.050 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.280 INCHES MAXIMUM |
| OVERALL WIDTH | 0.980 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| PRECIOUS MATERIAL AND LOCATION | INTERNAL METALIZATION GOLD |