NSN 5961-00-652-8720
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-652-8720 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N4663, RELEASE5137, 1N4663, 1N4663, 1N4663, 1N4663, 5961-00-652-8720, 00-652-8720, 5961006528720, 006528720
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 11, 1971 | 00-652-8720 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-652-8720
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N4663 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5137 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N4663 | 12969 | MICRO USPD INC |
| 1N4663 | 21845 | SOLITRON DEVICES, INC. |
| 1N4663 | 15818 | TELCOM SEMICONDUCTOR INC |
| 1N4663 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-00-652-8720
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET12.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACEB21.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.104 INCHES MINIMUM AND 0.140 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5137 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |