NSN 5961-00-681-8161
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-681-8161 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: SV125, 3221084P6, 322-1084P6, 3221084P6, 322-1084P6, 10105627, 5961-00-681-8161, 00-681-8161, 5961006818161, 006818161
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-681-8161 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-681-8161
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| SV125 | 03877 | GILBERT ENGINEERING CO INC/INCONSUB OF TRANSITRON ELECTRONIC CORP |
| 322-1084P6 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 322-1084P6 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
| 10105627 | 18876 | U S ARMY AVIATION AND MISSILECOMMAND |
Technical Data | NSN 5961-00-681-8161
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET6.5 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACEB10.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF250.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZM150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.265 INCHES NOMINAL |
| OVERALL DIAMETER | 0.096 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |