NSN 5961-00-682-8373
Part Details | TRANSISTOR
5961-00-682-8373 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N143, RELEASE1599, 332049, 332049, 5961-00-682-8373, 00-682-8373, 5961006828373, 006828373
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-682-8373 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-682-8373
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N143 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE1599 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 332049 | 1PQF4 | L3 TECHNOLOGIES, INC.DBA LINK SIMULATION & TRAINING |
| 332049 | 36378 | RAYTHEON TECHNICAL SERVICES COMPANY |
Technical Data | NSN 5961-00-682-8373
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CALM60.0 MAXIMUM AND CAQM30.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC800.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF4.0 WATTS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.750 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.500 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELESE1599 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |