NSN 5961-00-708-7562
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-708-7562 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: BUWEPSDWG2660940, 1N20361, 1N2036-1, 2660940, 1155770, 5961-00-708-7562, 00-708-7562, 5961007087562, 007087562
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 14, 1968 | 00-708-7562 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-708-7562
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| BUWEPSDWG2660940 | 97384 | AAI CORPORATIONDBA TEXTRON SYSTEMS |
| 1N2036-1 | 51182 | DIODES INC |
| 2660940 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
| 1155770 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
Technical Data | NSN 5961-00-708-7562
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET10.5 MAXIMUM |
| VOLTAGE TOLERANCE IN PERCENT | M10.0/P10.0 |
| CURRENT RATING PER CHARACTERISTIC | BACAS5.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF750.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS AND METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | DO-12 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.313 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.350 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.239 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |