NSN 5961-00-719-4357
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-719-4357 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N821A, SZ11522H, JAN1N8211, JAN1N821-1, 807326, 2576899, 5961-00-719-4357, 00-719-4357, 5961007194357, 007194357
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 14, 1968 | 00-719-4357 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-719-4357
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N821A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| SZ11522H | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| JAN1N821-1 | 43611 | MICROSEMI CORP.- MASSACHUSETTSDBA MICROSEMI-LAWRENCE |
| 807326 | 07342 | NAI TECHNOLOGIES INC |
| 2576899 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
Technical Data | NSN 5961-00-719-4357
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET6.2 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAS60.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG1.5 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.160 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.080 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |