NSN 5961-00-755-4350

Part Details | TRANSISTOR

5961-00-755-4350 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N250, 2N250, 2N250, 5961-00-755-4350, 00-755-4350, 5961007554350, 007554350

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-755-435020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-755-4350
Part Number Cage Code Manufacturer
2N2500PN68AMPEX DATA SYSTEMS CORPORATION
2N25092739AMPEX SYSTEMS CORP
2N25080131ELECTRONIC INDUSTRIES ASSOCIATION
Technical Data | NSN 5961-00-755-4350
Characteristic Specifications
SEMICONDUCTOR MATERIAL GERMANIUM
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAB30.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACAC2.00 AMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAB12.0 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN80.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD UNTHREADED HOLE
MOUNTING FACILITY QUANTITY2
TERMINAL LENGTH0.370 INCHES NOMINAL
TERMINAL CIRCLE DIAMETER0.430 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
OVERALL LENGTH0.410 INCHES MAXIMUM
OVERALL DIAMETER1.560 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESTWO NO. 16 MTG HOLES SPACED 1.187 IN. C TO C; JUNCTION PATTERN ARRANGEMENT: PNP
SPECIFICATION/STANDARD DATA80131-RELESE1748 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION