NSN 5961-00-757-7795
Part Details | TRANSISTOR
5961-00-757-7795 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 719199012, 719199-012, 719199012, 719199-012, 5961-00-757-7795, 00-757-7795, 5961007577795, 007577795
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1961 | 00-757-7795 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-757-7795
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 719199-012 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 719199-012 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-757-7795
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | C5.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACBS0.50 AMPERES NOMINAL AND AACBT0.50 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAE3.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |