NSN 5961-00-791-0229
Part Details | TRANSISTOR
5961-00-791-0229 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 1455304, 145530-4, 2N918, 5961-00-791-0229, 00-791-0229, 5961007910229, 007910229
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | APR 10, 1968 | 00-791-0229 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-791-0229
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 145530-4 | 24930 | HARRIS CORPORATIONDBA ELECTRONIC SYSTEMS, RADAR |
| 2N918 | 15818 | TELCOM SEMICONDUCTOR INC |
Technical Data | NSN 5961-00-791-0229
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB30.0 MAXIMUM AND CAC15.0 MAXIMUM AND CBM3.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB200.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |