NSN 5961-00-805-1769

Part Details | TRANSISTOR

5961-00-805-1769 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N1034, RELEASE 2948, 2N1034, 208826213, 2088262-13, N208826213, N2088262-13, 2N1034, 2N1034, N208826213, N2088262-13, 5961-00-805-1769, 00-805-1769, 5961008051769, 008051769

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196200-805-176920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-805-1769
Part Number Cage Code Manufacturer
2N103480131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE 294880131ELECTRONIC INDUSTRIES ASSOCIATION
2N103407933FAIRCHILD SEMICONDUCTOR CORPSEMICONDUCTOR DIV HQ
2088262-1327914HONEYWELL INTERNATIONAL INCDBA HONEYWELL
N2088262-1327914HONEYWELL INTERNATIONAL INCDBA HONEYWELL
2N103448294PSI-PERIPHERAL SUPPORT
2N103449956RAYTHEON COMPANYDBA RAYTHEON
N2088262-1306845RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-00-805-1769
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAB50.0 MAXIMUM AND CAC40.0 MAXIMUM AND CBM20.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICBACAC50.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICBZCAB250.0 MILLIWATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN200.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL LENGTH1.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.260 INCHES MAXIMUM
OVERALL DIAMETER0.370 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP