NSN 5961-00-806-8310
Part Details | TRANSISTOR
5961-00-806-8310 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N576A, RELEASE2202, 2N576A, A2447041, A244704-1, 5961-00-806-8310, 00-806-8310, 5961008068310, 008068310
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-806-8310 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-806-8310
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N576A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE2202 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N576A | 12045 | ELECTRONIC TRANSISTORS CORP |
| A244704-1 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-806-8310
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB40.0 MAXIMUM AND CBM15.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC400.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB200.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2202 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |