NSN 5961-00-806-8312
Part Details | TRANSISTOR
5961-00-806-8312 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1056, RELEASE 2929, A2444641, A244464-1, 5961-00-806-8312, 00-806-8312, 5961008068312, 008068312
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-806-8312 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-806-8312
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1056 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 2929 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| A244464-1 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-806-8312
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB70.0 MAXIMUM AND CAC50.0 MAXIMUM AND CBM15.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC300.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB240.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.750 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.250 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.345 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELESE2929 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |