NSN 5961-00-826-5385
Part Details | TRANSISTOR
5961-00-826-5385 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 4720143001, 472-0143-001, GT102B, 102B, 102B, 5961-00-826-5385, 00-826-5385, 5961008265385, 008265385
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-826-5385 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-826-5385
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 472-0143-001 | 94756 | BOEING COMPANY, THEDBA BOEING |
| GT102B | 15281 | GENERAL INSTRUMENT CORPSEMICONDUCTOR DIV |
| 102B | 14936 | GENERAL SEMICONDUCTOR INC |
| 102B | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-826-5385
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB25.0 MAXIMUM AND CBM25.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC300.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB150.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| OVERALL LENGTH | 0.250 INCHES NOMINAL |
| OVERALL DIAMETER | 0.359 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |