NSN 5961-00-835-4790
Part Details | TRANSISTOR
5961-00-835-4790 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 928326101, 928326-101, SU803, 5961-00-835-4790, 00-835-4790, 5961008354790, 008354790
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 20, 1967 | 00-835-4790 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-835-4790
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 928326-101 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| SU803 | 17856 | SILICONIX INCORPORATEDDIV SILICONIX |
Technical Data | NSN 5961-00-835-4790
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDTM30.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACBRM50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF300.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.195 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |