NSN 5961-00-845-2880
Part Details | TRANSISTOR
5961-00-845-2880 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 7230609, 723060-9, 7230609, 723060-9, 723060009, 723060-009, 723060009, 723060-009, 2N1016B, 2N1016B, 5961-00-845-2880, 00-845-2880, 5961008452880, 008452880
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1963 | 00-845-2880 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-845-2880
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 723060-9 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 723060-9 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 723060-009 | 82577 | RAYTHEON COMPANYDBA RAYTHEON |
| 723060-009 | 05869 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N1016B | 79500 | WESTINGHOUSE ELECTRIC CORP |
| 2N1016B | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-845-2880
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAC100.0 MAXIMUM AND CBM25.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAB5.00 AMPERES NOMINAL AND AACAC7.50 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB150.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.562 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.546 INCHES MAXIMUM |
| OVERALL DIAMETER | 1.281 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |