NSN 5961-00-848-1903
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-848-1903 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 200979001, 200979-001, 1N4770A, 1N4770A, JANTX1N4770, 20538220701, 2053822-0701, 5961-00-848-1903, 00-848-1903, 5961008481903, 008481903
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 27, 1967 | 00-848-1903 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-848-1903
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 200979-001 | 81413 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 1N4770A | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 1N4770A | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| JANTX1N4770 | 81350 | JOINT ARMY-NAVY SPECIFICATIONSPROMULGATED BY MILITARY DEPARTMENTS |
| 2053822-0701 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-00-848-1903
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET9.1 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACEB1.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG0.25 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.085 INCHES MINIMUM AND 0.107 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5009 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |