NSN 5961-00-854-6939
Part Details | TRANSISTOR
5961-00-854-6939 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N1406, 4127282, 412728-2, 2N1406, 5961-00-854-6939, 00-854-6939, 5961008546939, 008546939
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1962 | 00-854-6939 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-854-6939
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N1406 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 412728-2 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 2N1406 | 01295 | TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS |
Technical Data | NSN 5961-00-854-6939
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | GERMANIUM |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | PNP |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAL30.0 MAXIMUM AND CAN20.0 MAXIMUM AND CAY1.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF750.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.230 INCHES NOMINAL |
| OVERALL DIAMETER | 0.350 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIFICATION/STANDARD DATA | 80131-RELESE3519 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |