NSN 5961-00-902-1306
Part Details | TRANSISTOR
5961-00-902-1306 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N2274, 2157819, 5961-00-902-1306, 00-902-1306, 5961009021306, 009021306
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-902-1306 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-902-1306
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N2274 | 03776 | ESCO INC |
| 2157819 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
Technical Data | NSN 5961-00-902-1306
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CABM25.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND CACM25.0 MAXIMUM REVERSE GATE TO SOURCE VOLTAGE AND CBMM25.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACACM50.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF146.0 MILLIWATTS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| TEST DATA DOCUMENT | 10001-2157819 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |