NSN 5961-00-906-7876

Part Details | THYRISTOR SEMICONDUCTOR DEVICE

5961-00-906-7876 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N3653, 2N3653, RELEASE4957, C40D, C408, C141BX86, C140D, 2332162G1, 2332162, C40B, C141BX158, NLC40B, NL-C40B, 65A582, 2N3653, 66WH, 2863005, 2863-005, SMB651059, 5961-00-906-7876, 00-906-7876, 5961009067876, 009067876

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JAN 01, 196000-906-787633096 ( SEMICONDUCTOR DEVICE, THYRISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-906-7876
Part Number Cage Code Manufacturer
2N365380294BOURNS INSTRUMENTS INC
2N365380131ELECTRONIC INDUSTRIES ASSOCIATION
RELEASE495780131ELECTRONIC INDUSTRIES ASSOCIATION
C40D09019GENERAL ELECTRIC COPOWER ELECTRONICS SYSTEMS DEPT
C40809214GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
C141BX8603508GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
C140D09214GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT
2332162G131550HARRIS CORPORATIONDBA NIGHT VISION & COMMUNICATIONS
233216231550HARRIS CORPORATIONDBA NIGHT VISION & COMMUNICATIONS
C40B99971LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE
C141BX15899971LOCKHEED MARTIN CORPNAVAL ELECTRONICS & SURVEILLANCE
NL-C40B83781NATIONAL ELECTRONICSDIV OF RICHARDSON ELECTRONICS LTD
65A58229192OLYMPUS SCIENTIFIC SOLUTIONSTECHNOLOGIES INC.
2N365311871RECON/OPTICAL, INC.
66WH74006RELIANCE COMM/TEC CORPLORAIN PRODUCTS DIV
2863-00574006RELIANCE COMM/TEC CORPLORAIN PRODUCTS DIV
SMB65105980063US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS
Technical Data | NSN 5961-00-906-7876
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCDZ4.5 MAXIMUM AND CEH2.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACDN16.00 AMPERES NOMINAL AND BACDF500.00 MILLIAMPERES NOMINAL
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZM70.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE ANODE
MOUNTING METHOD THREADED STUD
MOUNTING FACILITY QUANTITY1
THREAD SERIES DESIGNATOR UNF
NOMINAL THREAD SIZE0.250 INCHES
TERMINAL TYPE AND QUANTITY1 THREADED STUD AND 2 TAB, SOLDER LUG
OVERALL LENGTH0.330 INCHES MINIMUM AND 0.505 INCHES MAXIMUM
OVERALL WIDTH ACROSS FLATS0.544 INCHES MINIMUM AND 0.562 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNPN
SPECIFICATION/STANDARD DATA80131-RELESE4957 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION