NSN 5961-00-917-3095
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-00-917-3095 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: JAN1N645, JAN1N645, 9536631, 953663-1, JAN1N645, JAN1N645, 5961-00-917-3095, 00-917-3095, 5961009173095, 009173095
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 25, 1966 | 00-917-3095 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-917-3095
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JAN1N645 | 72699 | GENERAL INSTRUMENT CORPCORPORATE HEADQUARTERS |
| JAN1N645 | 14936 | GENERAL SEMICONDUCTOR INC |
| 953663-1 | 94580 | HONEYWELL INTERNATIONAL INC.DBA HONEYWELL |
| JAN1N645 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| JAN1N645 | 01281 | TRW ELECTRONICS AND DEFENSE SECTORRF DEVICES |
Technical Data | NSN 5961-00-917-3095
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDA225.0 MAXIMUM AND CET270.0 MAXIMUM AND CDB159.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACCG400.00 MILLIAMPERES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL150.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.125 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |