NSN 5961-00-918-6484
Part Details | TRANSISTOR
5961-00-918-6484 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 1079272, 1079-272, 2N1016D, 5961-00-918-6484, 00-918-6484, 5961009186484, 009186484
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JAN 01, 1960 | 00-918-6484 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-00-918-6484
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1079-272 | 72314 | BAE SYSTEMS INFORMATION ANDELECTRONIC SYSTEMS INTEGRATION I |
| 2N1016D | 05277 | WESTINGHOUSE ELECTRIC CORPSEMICONDUCTOR DIV |
Technical Data | NSN 5961-00-918-6484
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| INTERNAL JUNCTION CONFIGURATION | NPN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB200.0 MAXIMUM AND CAC200.0 MAXIMUM AND CBM25.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC7.50 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAB150.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.312 INCHES |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.550 INCHES MAXIMUM |
| OVERALL DIAMETER | 1.280 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |