NSN 5961-01-006-0210

Part Details | TRANSISTOR

5961-01-006-0210 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: 2N6375, 8014641, 801464-1, 5961-01-006-0210, 01-006-0210, 5961010060210, 010060210

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59JUL 14, 197501-006-021020588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-006-0210
Part Number Cage Code Manufacturer
2N637527014NATIONAL SEMICONDUCTOR CORPORATION
801464-196214RAYTHEON COMPANYDBA RAYTHEON
Technical Data | NSN 5961-01-006-0210
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION JUNCTION CONTACT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAM75.0 MAXIMUM AND CA+40.0 MAXIMUM AND CBA6.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICAACAC1.00 AMPERES NOMINAL
POWER RATING PER CHARACTERISTICBZCAB580.0 MILLIWATTS
INCLOSURE MATERIAL METAL
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE COLLECTOR
MOUNTING METHOD TERMINAL
TERMINAL LENGTH0.500 INCHES MINIMUM
TERMINAL CIRCLE DIAMETER0.100 INCHES NOMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
SPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: NPN