NSN 5961-01-006-5319
Part Details | TRANSISTOR
5961-01-006-5319 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5822, RELEASE 6045, S12001158, S12001-158, JAN2N5822, 5961-01-006-5319, 01-006-5319, 5961010065319, 010065319
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUL 18, 1975 | 01-006-5319 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-006-5319
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5822 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE 6045 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| S12001-158 | 25583 | L3 AVIATION PRODUCTS, INC. |
| JAN2N5822 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
Technical Data | NSN 5961-01-006-5319
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A0.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | BACAC750.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB500.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN135.0 DEG CELSIUS |
| INCLOSURE MATERIAL | PLASTIC |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL WIDTH | 0.205 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |