NSN 5961-01-008-7652
Part Details | TRANSISTOR
5961-01-008-7652 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 40312V1, 5860601, 586060-1, 5961-01-008-7652, 01-008-7652, 5961010087652, 010087652
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 29, 1975 | 01-008-7652 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-008-7652
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 40312V1 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
| 586060-1 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-008-7652
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A0.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AACAC4.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF29.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN |
| OVERALL LENGTH | 0.340 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.340 INCHES MAXIMUM |
| OVERALL WIDTH | 0.620 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |