NSN 5961-01-016-8850
Part Details | TRANSISTOR
5961-01-016-8850 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5380, RELEASE6281, 275539001, 275539-001, 2N5380, 5961-01-016-8850, 01-016-8850, 5961010168850, 010168850
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | FEB 25, 1976 | 01-016-8850 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-016-8850
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5380 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE6281 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 275539-001 | 65092 | SOLARTRON ELECTRONICS INCWESTON INSTRUMENTS DIV |
| 2N5380 | 56289 | SPRAGUE ELECTRIC COWORLD HQS |
Technical Data | NSN 5961-01-016-8850
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB60.0 MAXIMUM AND CAC40.0 MAXIMUM AND CBM6.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC200.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB360.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN165.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| TERMINAL CIRCLE DIAMETER | 0.166 INCHES MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.205 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| SPECIFICATION/STANDARD DATA | 80131-RELESE6281 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |