NSN 5961-01-023-6120
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-023-6120 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1640475, 164-0475, 164475, 164-475, 1N4575, 1N4575, 3533701030, 353-3701-030, 164475, 164-475, 5961-01-023-6120, 01-023-6120, 5961010236120, 010236120
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 21, 1976 | 01-023-6120 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-023-6120
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 164-0475 | 54817 | AUTEK SYSTEMS CORP |
| 164-475 | 54817 | AUTEK SYSTEMS CORP |
| 1N4575 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1N4575 | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 353-3701-030 | 13499 | ROCKWELL COLLINS, INC.DBA GOVERNMENT SYSTEMS |
| 164-475 | 52542 | SYSTRON-DONNER CORPMICROWAVE/INSTRUMENT DIV |
Technical Data | NSN 5961-01-023-6120
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET6.4 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACEB2.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAF400.0 MILLIWATTS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.000 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.300 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.096 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |