NSN 5961-01-026-8936
Part Details | TRANSISTOR
5961-01-026-8936 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 3N204, DMS 90061B, 3N204, 48P10962D001, 5961-01-026-8936, 01-026-8936, 5961010268936, 010268936
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | AUG 30, 1976 | 01-026-8936 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-026-8936
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 3N204 | 1S926 | AMERICAN MICROSEMICONDUCTOR INC |
| DMS 90061B | 16236 | DLA LAND AND MARITIMEDBA ENGINEERING AND TECHNICAL |
| 3N204 | 18722 | HARRIS CORPSEMICONDUCTOR SECTOR |
| 48P10962D001 | 94990 | MOTOROLA INC.DBA INTEGRATED INFORMATION SYSTEMS |
Technical Data | NSN 5961-01-026-8936
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | FIELD EFFECT-DUAL GATE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAX25.0 MAXIMUM AND CDR35.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAD30.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAG300.0 MILLIWATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-72 |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |