NSN 5961-01-027-4289
Part Details | TRANSISTOR
5961-01-027-4289 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 8022261, 802226-1, 68SE112, 5961-01-027-4289, 01-027-4289, 5961010274289, 010274289
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 16, 1976 | 01-027-4289 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-027-4289
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 802226-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 68SE112 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-01-027-4289
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAMM170.0 MAXIMUM AND CAPM170.0 MAXIMUM AND CBAM16.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | AACEEM16.00 AMPERES NOMINAL AND AACABM5.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF200.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL LENGTH | 0.312 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | BURN-UN TEST REQUIREMENTS; JUNCTION PATTERN ARRANGEMENT: PNP |