NSN 5961-01-027-8749
Part Details | TRANSISTOR
5961-01-027-8749 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 8022271, 802227-1, 79SE187, 5961-01-027-8749, 01-027-8749, 5961010278749, 010278749
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 20, 1976 | 01-027-8749 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-027-8749
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 802227-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 79SE187 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-01-027-8749
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM170.0 MAXIMUM AND CA+170.0 MAXIMUM AND CBA7.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACEE16.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF200.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-3 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL LENGTH | 0.312 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | BURN-IN TEST REQUIREMENTS; JUNCTION PATTERN ARRANGEMENT: NPN |