NSN 5961-01-029-5642
Part Details | DIODE SEMICONDUCTOR DEVICE
5961-01-029-5642 A two electrode semiconductor device having an asymmetrical voltage - current characteristic. May or may not include mounting hardware and/or heatsink. Excludes LIGHT EMITTING DIODE and SEMICONDUCTOR DEVICE,PHOTO. For items containing material such as selenium and copper oxide, see RECIFIER, METALLIC.
Alternate Parts: 1N3016P0RM1PCT, 1M6.8Z1, DZ710801E, 28366495, 2836649-5, 5961-01-029-5642, 01-029-5642, 5961010295642, 010295642
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | OCT 17, 1976 | 01-029-5642 | 20589 ( SEMICONDUCTOR DEVICE, DIODE ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-029-5642
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1N3016P0RM1PCT | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| 1M6.8Z1 | 04713 | FREESCALE SEMICONDUCTOR, INC. |
| DZ710801E | 12954 | MICROSEMI CORP.-SCOTTSDALEDBA MICROSEMI |
| 2836649-5 | 10001 | NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT |
Technical Data | NSN 5961-01-029-5642
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CET6.8 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACEB7.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN175.0 DEG CELSIUS |
| INCLOSURE MATERIAL | GLASS |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.100 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.293 INCHES MINIMUM AND 0.357 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.215 INCHES MINIMUM AND 0.235 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |