NSN 5961-01-031-1209

Part Details | TRANSISTOR

5961-01-031-1209 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.

Alternate Parts: H33925, 28873892, 2887389-2, 28873892, 2887389-2, 28873892, 2887389-2, F2396, SFC4197, 5961-01-031-1209, 01-031-1209, 5961010311209, 010311209

Supply Group (FSG) NSN Assigned NIIN Item Name Code (INC)
59NOV 19, 197601-031-120920588 ( TRANSISTOR )
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-031-1209
Part Number Cage Code Manufacturer
H3392513715FAIRCHILD SEMICONDUCTOR CORPCOMPONENTS GROUP
2887389-210001NAVAIR AND NAVSEA MANAGEDORIGINAL DESIGN ACTIVITY DWG NOT
2887389-249956RAYTHEON COMPANYDBA RAYTHEON
2887389-23B150RAYTHEON COMPANYDBA RAYTHEON
F239621845SOLITRON DEVICES, INC.
SFC419701295TEXAS INSTRUMENTS INCORPORATEDDBA TEXAS INSTRUMENTS
Technical Data | NSN 5961-01-031-1209
Characteristic Specifications
SEMICONDUCTOR MATERIAL SILICON
INTERNAL CONFIGURATION FIELD EFFECT
VOLTAGE RATING IN VOLTS PER CHARACTERISTICCAW40.0 MAXIMUM AND C10.0 MAXIMUM
CURRENT RATING PER CHARACTERISTICBACAK50.00 MILLIAMPERES NOMINAL AND BACCW150.00 MILLIAMPERES NOMINAL
POWER RATING PER CHARACTERISTICATCAF1.8 WATTS
MAXIMUM OPERATING TEMP PER MEASUREMENT POINTCAZN200.0 DEG CELSIUS
INCLOSURE MATERIAL METAL
MOUNTING METHOD TERMINAL
TERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
OVERALL LENGTH0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM
OVERALL DIAMETER0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM
FEATURES PROVIDED HERMETICALLY SEALED CASE
TEST DATA DOCUMENT10001-2887389 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING)