NSN 5961-01-033-2330
Part Details | TRANSISTOR
5961-01-033-2330 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 40387960001, 4038796-0001, CD3707, D2028B, D20-28B, 5961-01-033-2330, 01-033-2330, 5961010332330, 010332330
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 31, 1976 | 01-033-2330 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-033-2330
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 4038796-0001 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
| CD3707 | 59677 | RF GAIN LTD |
| D20-28B | 50155 | VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV |
Technical Data | NSN 5961-01-033-2330
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | A0.0 NOMINAL |
| CURRENT RATING PER CHARACTERISTIC | AACAC2.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF40.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNC |
| NOMINAL THREAD SIZE | 0.164 INCHES |
| TERMINAL TYPE AND QUANTITY | 4 FERRULE |
| OVERALL LENGTH | 0.280 INCHES MAXIMUM |
| OVERALL WIDTH | 0.300 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |