NSN 5961-01-033-2331
Part Details | TRANSISTOR
5961-01-033-2331 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 1A5TRANSISTOR, 40387940001, 4038794-0001, 1A5TRANSISTOR, E1E, 5961-01-033-2331, 01-033-2331, 5961010332331, 010332331
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 31, 1976 | 01-033-2331 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-033-2331
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 1A5TRANSISTOR | 58135 | ACRIAN INC |
| 4038794-0001 | 06845 | RAYTHEON COMPANYDBA RAYTHEON |
| 1A5TRANSISTOR | 08125 | U S DEPT OF TRANSPORTATION FEDERALAVIATION ADMINISTRATION |
| E1E | 50155 | VARIAN ASSOCIATES INCCOMMUNICATIONS TRANSISTOR DIV |
Technical Data | NSN 5961-01-033-2331
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB50.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC250.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF5.3 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 4 FERRULE |
| OVERALL LENGTH | 0.190 INCHES MAXIMUM |
| OVERALL WIDTH | 0.160 INCHES MAXIMUM |
| SPECIAL FEATURES | STUD MOUNTING; JUNCTION PATTERN ARRANGEMENT: NPN |
| END ITEM IDENTIFICATION | AIR TRAFFIC CONTROL BEACON INTERROGATOR 5 (ATCBI5) |