NSN 5961-01-036-8900
Part Details | TRANSISTOR
5961-01-036-8900 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 2N5367, RELEASE5793, 2N5367, 5961-01-036-8900, 01-036-8900, 5961010368900, 010368900
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 07, 1977 | 01-036-8900 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-036-8900
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 2N5367 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| RELEASE5793 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
| 2N5367 | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
Technical Data | NSN 5961-01-036-8900
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAB40.0 MAXIMUM AND CAC40.0 MAXIMUM AND CBM4.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACAC500.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | BZCAB360.0 MILLIWATTS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.225 INCHES MINIMUM AND 0.265 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.090 INCHES MINIMUM AND 0.205 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |
| SPECIFICATION/STANDARD DATA | 80131-RELESE5793 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |