NSN 5961-01-037-8876
Part Details | TRANSISTOR
5961-01-037-8876 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 65578, SMB428377, SM-B-428377, 5961-01-037-8876, 01-037-8876, 5961010378876, 010378876
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | MAR 26, 1977 | 01-037-8876 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-037-8876
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 65578 | 34371 | INTERSIL CORPORATIONDIV NA |
| SM-B-428377 | 80063 | US ARMY COMMUNICATIONS &ELECTRONICS MATERIEL READINESS |
Technical Data | NSN 5961-01-037-8876
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM50.0 MAXIMUM AND CA+40.0 MAXIMUM AND CBA5.0 MAXIMUM AND CFL50.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAB2.00 AMPERES NOMINAL AND AACAC4.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF29.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-66 |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 PIN |
| OVERALL LENGTH | 1.252 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.700 INCHES NOMINAL |
| OVERALL WIDTH | 0.700 INCHES NOMINAL |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |