NSN 5961-01-042-0418
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-042-0418 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: 150C30B, 5961-01-042-0418, 01-042-0418, 5961010420418, 010420418
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 06, 1977 | 01-042-0418 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-042-0418
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| 150C30B | 59377 | MICROSEMI CORP-COLORADO |
Technical Data | NSN 5961-01-042-0418
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CDZ3.0 MAXIMUM AND CDT0.3 MAXIMUM AND CDD400.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | BACDF200.00 MILLIAMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAE10.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN125.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.750 INCHES |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD W/TERMINAL LUG |
| OVERALL LENGTH | 3.625 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 1.218 INCHES MINIMUM AND 1.250 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |