NSN 5961-01-051-6656
Part Details | TRANSISTOR
5961-01-051-6656 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: PH8294, MSC70004, 9145112, 914511-2, 9145112, 914511-2, 5961-01-051-6656, 01-051-6656, 5961010516656, 010516656
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 03, 1977 | 01-051-6656 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-051-6656
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| PH8294 | 50998 | M/A-COM TECHNOLOGY SOLUTIONS INC. |
| MSC70004 | 32421 | MICROWAVE SEMICONDUCTOR CORP |
| 914511-2 | 49956 | RAYTHEON COMPANYDBA RAYTHEON |
| 914511-2 | 3B150 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-051-6656
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM65.0 MAXIMUM AND CA+20.0 MAXIMUM AND C.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC2.50 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAG20.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | EMITTER |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | R2$JABB1 |
| OVERALL LENGTH | 0.890 INCHES MINIMUM AND 0.910 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.240 INCHES MAXIMUM |
| OVERALL WIDTH | 0.376 INCHES MINIMUM AND 0.410 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | T.O. 31P6-2FPS115-62; N/H/A RADAR TRANSMITTER; JUNCTION PATTERN ARRANGEMENT: NPN |
| END ITEM IDENTIFICATION | AN/FPS115 |