NSN 5961-01-061-3412
Part Details | TRANSISTOR
5961-01-061-3412 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: JANTX2N5109, 6155891, 615589-1, JANXTX2N5109, 5961-01-061-3412, 01-061-3412, 5961010613412, 010613412
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | JUN 17, 1978 | 01-061-3412 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-061-3412
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| JANTX2N5109 | 81349 | MILITARY SPECIFICATIONSPROMULGATED BY MILITARY |
| 615589-1 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
| JANXTX2N5109 | 37695 | RAYTHEON COMPANYDBA RAYTHEON |
Technical Data | NSN 5961-01-061-3412
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAM40.0 MAXIMUM AND CA+20.0 MAXIMUM AND CBA3.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC0.40 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF1.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZL200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| MOUNTING METHOD | TERMINAL |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.260 INCHES MAXIMUM |
| OVERALL DIAMETER | 0.370 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 37695-615589 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |