NSN 5961-01-065-7580
Part Details | THYRISTOR SEMICONDUCTOR DEVICE
5961-01-065-7580 A bistable semiconductor device comprising three or more junctions which is normally a nonconductor until the application of a signal to a gate terminal, at which time the device switches to the conductive state. Includes devices capable of being switched back to the nonconductive state upon application of a different signal to the same or another gate terminal. May or may not include mounting hardware and/or heatsink. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: C234D, 5961-01-065-7580, 01-065-7580, 5961010657580, 010657580
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | SEP 23, 1978 | 01-065-7580 | 33096 ( SEMICONDUCTOR DEVICE, THYRISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-065-7580
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| C234D | 03508 | GENERAL ELECTRIC COSEMI-CONDUCTOR PRODUCTS DEPT |
Technical Data | NSN 5961-01-065-7580
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CD+400.0 MAXIMUM AND CDC400.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACDS25.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAH0.5 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN100.0 DEG CELSIUS |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| MOUNTING METHOD | THREADED STUD |
| MOUNTING FACILITY QUANTITY | 1 |
| THREAD SERIES DESIGNATOR | UNF |
| NOMINAL THREAD SIZE | 0.250 INCHES |
| TERMINAL TYPE AND QUANTITY | 1 CASE AND 2 TAB, SOLDER LUG |
| OVERALL LENGTH | 0.475 INCHES MAXIMUM |
| OVERALL WIDTH ACROSS FLATS | 0.552 INCHES MINIMUM AND 0.562 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNPN |