NSN 5961-01-068-8835
Part Details | TRANSISTOR
5961-01-068-8835 An active semiconductor device with three or more electrodes. May or may not include mounting hardware and/or heatsink. Excludes SEMICONDUCTOR DEVICE, DIODE and SEMICONDUCTOR DEVICE, THYRISTOR. For solid state devices which are responsive to visible or infrared radiant energy, see SEMICONDUCTOR DEVICE, PHOTO.
Alternate Parts: PP8392, 8017401, 801740-1, 12SE179, 5961-01-068-8835, 01-068-8835, 5961010688835, 010688835
| Supply Group (FSG) | NSN Assigned | NIIN | Item Name Code (INC) |
|---|---|---|---|
| 59 | DEC 06, 1978 | 01-068-8835 | 20588 ( TRANSISTOR ) |
REFERENCE DRAWINGS & PICTURES
Cross Reference | NSN 5961-01-068-8835
| Part Number | Cage Code | Manufacturer |
|---|---|---|
| PP8392 | 33178 | MICROSEMI PPC INC |
| 801740-1 | 96214 | RAYTHEON COMPANYDBA RAYTHEON |
| 12SE179 | 21845 | SOLITRON DEVICES, INC. |
Technical Data | NSN 5961-01-068-8835
| Characteristic | Specifications |
|---|---|
| SEMICONDUCTOR MATERIAL | SILICON |
| INTERNAL CONFIGURATION | JUNCTION CONTACT |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | CAL250.0 MAXIMUM AND CA+200.0 MAXIMUM AND CAY6.0 MAXIMUM |
| CURRENT RATING PER CHARACTERISTIC | AACAC5.00 AMPERES NOMINAL |
| POWER RATING PER CHARACTERISTIC | ATCAF60.0 WATTS |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | CAZN200.0 DEG CELSIUS |
| INCLOSURE MATERIAL | METAL |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| MOUNTING METHOD | UNTHREADED HOLE |
| MOUNTING FACILITY QUANTITY | 2 |
| TERMINAL TYPE AND QUANTITY | 2 PIN AND 1 CASE |
| OVERALL LENGTH | 1.573 INCHES MAXIMUM |
| OVERALL HEIGHT | 0.450 INCHES MAXIMUM |
| OVERALL WIDTH | 1.050 INCHES MAXIMUM |
| SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TEST DATA DOCUMENT | 96214-801740 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |